Passively modelocked 15, 20 and 40 Ghz bulk InGaAsP lasers

Y. Barbarin, E.A.J.M. Bente, M.J.R. Heck, Y.S. Oei, R. Nötzel, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking in 20 GHz self colliding pulse modelocked lasers and 40 GHz colliding pulse lasers has been demonstrated and the devices have been characterized. Pulse lengths down to 1.6 ps have been observed from a linear device at 20GHz. 15GHz modelocked ring lasers have been fabricated as well. In order to avoid internal reflections in the ring, the design employs successfully adiabatic bends and a directional coupler. Measurements with a 50GHz RF analyzer showed more stable operation than the linear devices, but pulses are highly chirped. The layer stack used for these lasers is compatible with our active-passive integration scheme.
Originele taal-2Engels
TitelProceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
RedacteurenP. Mégret, M. Wuilpart, S. Bette, N. Staquet
Plaats van productieMons
UitgeverijIEEE/LEOS
Pagina's249-252
ISBN van geprinte versie2-960022645
StatusGepubliceerd - 2005
Evenement10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, België
Duur: 1 dec 20052 dec 2005

Congres

Congres10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
Land/RegioBelgië
StadMons
Periode1/12/052/12/05
Ander10th Annual Symposium IEEE/LEOS Benelux Chapter, Mons, Belgium

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