Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

M.J.R. Heck, A. Renault, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, K.S.E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Abstract. Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53 ¿m is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.
Originele taal-2Engels
TitelProceedings of the 14th European Conference on Integrated Optics, ECIO08, June 11-13, Eindhoven, The Netherlands
RedacteurenX.J.M. Leijtens
Plaats van productieEindhoven, Netherlands
UitgeverijTechnische Universiteit Eindhoven
Pagina's59-62
ISBN van geprinte versie978-90-386-1317-8
StatusGepubliceerd - 2008
Evenement14th European Conference on Integrated Optics (ECIO 2008) - Eindhoven, Nederland
Duur: 11 jun 200813 jun 2008
Congresnummer: 14

Congres

Congres14th European Conference on Integrated Optics (ECIO 2008)
Verkorte titelECIO 2008
Land/RegioNederland
StadEindhoven
Periode11/06/0813/06/08
Ander14th European Conference on Integrated Optics and technical exhibition, ECIO '08, Eindhoven, The Netherlands

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