Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

K. van Gasse, Z. Wang, V. Moskalenko, S. Latkowski, B. Kuyken, E.A.J.M. Bente, Gunther Roelkens

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.
Originele taal-2Engels
Titel2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-2
Aantal pagina's2
ISBN van elektronische versie978-4-8855-2306-9
ISBN van geprinte versie978-1-5090-2451-3
StatusGepubliceerd - 5 dec 2016
Evenement25th IEEE International Semiconductor Laser Conference (ISLC 2016) - Kobe, Japan
Duur: 12 sep 201615 sep 2016
Congresnummer: 25
http://islc2016.org/

Congres

Congres25th IEEE International Semiconductor Laser Conference (ISLC 2016)
Verkorte titelISLC 2016
LandJapan
StadKobe
Periode12/09/1615/09/16
Internet adres

Vingerafdruk

autocorrelation
optical spectrum
repetition
purity
chips
waveguides
output
silicon
pulses
lasers

Citeer dit

van Gasse, K., Wang, Z., Moskalenko, V., Latkowski, S., Kuyken, B., Bente, E. A. J. M., & Roelkens, G. (2016). Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. In 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan (blz. 1-2). [ThB6] Piscataway: Institute of Electrical and Electronics Engineers.
van Gasse, K. ; Wang, Z. ; Moskalenko, V. ; Latkowski, S. ; Kuyken, B. ; Bente, E.A.J.M. ; Roelkens, Gunther. / Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2016. blz. 1-2
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title = "Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate",
abstract = "We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.",
author = "{van Gasse}, K. and Z. Wang and V. Moskalenko and S. Latkowski and B. Kuyken and E.A.J.M. Bente and Gunther Roelkens",
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van Gasse, K, Wang, Z, Moskalenko, V, Latkowski, S, Kuyken, B, Bente, EAJM & Roelkens, G 2016, Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. in 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan., ThB6, Institute of Electrical and Electronics Engineers, Piscataway, blz. 1-2, Kobe, Japan, 12/09/16.

Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. / van Gasse, K.; Wang, Z.; Moskalenko, V.; Latkowski, S.; Kuyken, B.; Bente, E.A.J.M.; Roelkens, Gunther.

2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2016. blz. 1-2 ThB6.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

AU - van Gasse, K.

AU - Wang, Z.

AU - Moskalenko, V.

AU - Latkowski, S.

AU - Kuyken, B.

AU - Bente, E.A.J.M.

AU - Roelkens, Gunther

PY - 2016/12/5

Y1 - 2016/12/5

N2 - We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.

AB - We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.

M3 - Conference contribution

SN - 978-1-5090-2451-3

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EP - 2

BT - 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

van Gasse K, Wang Z, Moskalenko V, Latkowski S, Kuyken B, Bente EAJM et al. Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. In 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan. Piscataway: Institute of Electrical and Electronics Engineers. 2016. blz. 1-2. ThB6