Passive components on AIN for application in AlGaN/GaN power amplifiers

B. Jacobs; B.C.L. van Straaten; M.C.J.C.M. Krämer; F. Karouta; A.P. Hek, de; E. Suijker; R. Dijk, van

doi:10.1557/PROC-693-I11.1.1

Passive components on AIN for application in AlGaN/GaN power amplifiers

B. Jacobs
, B.C.L. van Straaten
, M.C.J.C.M. Krämer
, F. Karouta
, A.P. Hek, de
, E. Suijker
, R. Dijk, van

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.

Originele taal-2	Engels
Titel	GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.
Redacteuren	John E. Northrup
Plaats van productie	Warrendale
Uitgeverij	Materials Research Society
Pagina's	629-634
ISBN van geprinte versie	1-55899-629-X
DOI's	https://doi.org/10.1557/PROC-693-I11.1.1
Status	Gepubliceerd - 2002
Evenement	2001 MRS Fall Meeting & Exhibit - Boston, Verenigde Staten van Amerika Duur: 26 nov. 2001 → 30 nov. 2001 https://www.mrs.org/fall2001 http://www.mrs.org/f01-program-l/

Publicatie series

Naam	Materials Research Society symposium proceedings
Volume	693

Congres

Congres	2001 MRS Fall Meeting & Exhibit
Land/Regio	Verenigde Staten van Amerika
Stad	Boston
Periode	26/11/01 → 30/11/01
Ander	MRS Fall meeting Boston MA, USA
Internet adres	https://www.mrs.org/fall2001 http://www.mrs.org/f01-program-l/

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10.1557/PROC-693-I11.1.1

Citeer dit

Jacobs, B., van Straaten, B. C. L., Krämer, M. C. J. C. M., Karouta, F., Hek, de, A. P., Suijker, E., & Dijk, van, R. (2002). Passive components on AIN for application in AlGaN/GaN power amplifiers. In J. E. Northrup (editor), GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A. (blz. 629-634). (Materials Research Society symposium proceedings; Vol. 693). Materials Research Society. https://doi.org/10.1557/PROC-693-I11.1.1

Jacobs, B. ; van Straaten, B.C.L. ; Krämer, M.C.J.C.M. et al. / Passive components on AIN for application in AlGaN/GaN power amplifiers. GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.. redacteur / John E. Northrup. Warrendale : Materials Research Society, 2002. blz. 629-634 (Materials Research Society symposium proceedings).

@inproceedings{7b1b3990cfd94d12815b1bea1b82807d,

title = "Passive components on AIN for application in AlGaN/GaN power amplifiers",

abstract = "We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.",

author = "B. Jacobs and \{van Straaten\}, B.C.L. and M.C.J.C.M. Kr{\"a}mer and F. Karouta and \{Hek, de\}, A.P. and E. Suijker and \{Dijk, van\}, R.",

year = "2002",

doi = "10.1557/PROC-693-I11.1.1",

language = "English",

isbn = "1-55899-629-X",

series = "Materials Research Society symposium proceedings",

publisher = "Materials Research Society",

pages = "629--634",

editor = "Northrup, \{John E.\}",

booktitle = "GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.",

address = "United States",

note = "2001 MRS Fall Meeting \& Exhibit ; Conference date: 26-11-2001 Through 30-11-2001",

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}

Jacobs, B, van Straaten, BCL, Krämer, MCJCM, Karouta, F, Hek, de, AP, Suijker, E & Dijk, van, R 2002, Passive components on AIN for application in AlGaN/GaN power amplifiers. in JE Northrup (uitgave), GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.. Materials Research Society symposium proceedings, vol. 693, Materials Research Society, Warrendale, blz. 629-634, 2001 MRS Fall Meeting & Exhibit, Boston, Massachusetts, Verenigde Staten van Amerika, 26/11/01. https://doi.org/10.1557/PROC-693-I11.1.1

Passive components on AIN for application in AlGaN/GaN power amplifiers. / Jacobs, B.; van Straaten, B.C.L.; Krämer, M.C.J.C.M. et al.
GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.. uitgave / John E. Northrup. Warrendale: Materials Research Society, 2002. blz. 629-634 (Materials Research Society symposium proceedings; Vol. 693).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Jacobs, B.

AU - van Straaten, B.C.L.

AU - Krämer, M.C.J.C.M.

AU - Karouta, F.

AU - Hek, de, A.P.

AU - Suijker, E.

AU - Dijk, van, R.

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N2 - We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.

AB - We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.

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DO - 10.1557/PROC-693-I11.1.1

M3 - Conference contribution

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EP - 634

BT - GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.

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PB - Materials Research Society

CY - Warrendale

T2 - 2001 MRS Fall Meeting & Exhibit

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ER -

Jacobs B, van Straaten BCL, Krämer MCJCM, Karouta F, Hek, de AP, Suijker E et al. Passive components on AIN for application in AlGaN/GaN power amplifiers. In Northrup JE, redacteur, GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.. Warrendale: Materials Research Society. 2002. blz. 629-634. (Materials Research Society symposium proceedings). doi: 10.1557/PROC-693-I11.1.1

Passive components on AIN for application in AlGaN/GaN power amplifiers

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