Passive and heterogeneous integration towards a Si-based System-in-Package concept

F. Roozeboom; A.L.A.M. Kemmeren; J.F.C. Verhoeven; F.C. Heuvel, van den; J.H. Klootwijk; H. Kretschman; T. Fric; E.C.E. Grunsven, van; S. Bardy; C. Bunel; D. Chevrie; F. LeCornec; S. Ledain; F. Murray; P. Philippe

doi:10.1016/j.tsf.2005.09.103

Passive and heterogeneous integration towards a Si-based System-in-Package concept

F. Roozeboom
, A.L.A.M. Kemmeren
, J.F.C. Verhoeven
, F.C. Heuvel, van den
, J.H. Klootwijk
, H. Kretschman
, T. Fric
, E.C.E. Grunsven, van
, S. Bardy
, C. Bunel
, D. Chevrie
, F. LeCornec
, S. Ledain
, F. Murray
, P. Philippe

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

74 Citaten (Scopus)

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Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (~20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL

Originele taal-2	Engels
Pagina's (van-tot)	391-396
Tijdschrift	Thin Solid Films
Volume	504
Nummer van het tijdschrift	1-2
DOI's	https://doi.org/10.1016/j.tsf.2005.09.103
Status	Gepubliceerd - 2006

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10.1016/j.tsf.2005.09.103

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Roozeboom, F., Kemmeren, A. L. A. M., Verhoeven, J. F. C., Heuvel, van den, F. C., Klootwijk, J. H., Kretschman, H., Fric, T., Grunsven, van, E. C. E., Bardy, S., Bunel, C., Chevrie, D., LeCornec, F., Ledain, S., Murray, F., & Philippe, P. (2006). Passive and heterogeneous integration towards a Si-based System-in-Package concept. Thin Solid Films, 504(1-2), 391-396. https://doi.org/10.1016/j.tsf.2005.09.103

@article{bb0fdb7232454a71a23808c892a699cd,

title = "Passive and heterogeneous integration towards a Si-based System-in-Package concept",

abstract = "Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (\textasciitilde{}20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL",

author = "F. Roozeboom and A.L.A.M. Kemmeren and J.F.C. Verhoeven and \{Heuvel, van den\}, F.C. and J.H. Klootwijk and H. Kretschman and T. Fric and \{Grunsven, van\}, E.C.E. and S. Bardy and C. Bunel and D. Chevrie and F. LeCornec and S. Ledain and F. Murray and P. Philippe",

year = "2006",

doi = "10.1016/j.tsf.2005.09.103",

language = "English",

volume = "504",

pages = "391--396",

journal = "Thin Solid Films",

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}

Roozeboom, F, Kemmeren, ALAM, Verhoeven, JFC, Heuvel, van den, FC, Klootwijk, JH, Kretschman, H, Fric, T, Grunsven, van, ECE, Bardy, S, Bunel, C, Chevrie, D, LeCornec, F, Ledain, S, Murray, F & Philippe, P 2006, 'Passive and heterogeneous integration towards a Si-based System-in-Package concept', Thin Solid Films, vol. 504, nr. 1-2, blz. 391-396. https://doi.org/10.1016/j.tsf.2005.09.103

TY - JOUR

T1 - Passive and heterogeneous integration towards a Si-based System-in-Package concept

AU - Roozeboom, F.

AU - Kemmeren, A.L.A.M.

AU - Verhoeven, J.F.C.

AU - Heuvel, van den, F.C.

AU - Klootwijk, J.H.

AU - Kretschman, H.

AU - Fric, T.

AU - Grunsven, van, E.C.E.

AU - Bardy, S.

AU - Bunel, C.

AU - Chevrie, D.

AU - LeCornec, F.

AU - Ledain, S.

AU - Murray, F.

AU - Philippe, P.

PY - 2006

Y1 - 2006

N2 - Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (~20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL

AB - Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (~20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL

U2 - 10.1016/j.tsf.2005.09.103

DO - 10.1016/j.tsf.2005.09.103

M3 - Article

SN - 0040-6090

VL - 504

SP - 391

EP - 396

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Passive and heterogeneous integration towards a Si-based System-in-Package concept

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