Ostwald ripening of {113} defects precursors and transient enhanced diffusion

Giovanni Mannino, Nicholas E.B. Cowern, Peter A. Stolk, Fred Roozeboom, Hendrik G.A. Huizing, Jurgen G.M. Van Berkum, Wiebe B. De Boer, Filadelfo Cristiano, Alain Claverie, Martin Jaraiz

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

6 Citaten (Scopus)

Samenvatting

The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic `plateau' related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

Originele taal-2Engels
Titel1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing
Plaats van productieWarrendale
UitgeverijMaterials Research Society
Pagina's163-168
Aantal pagina's6
StatusGepubliceerd - 1 jan 1999
Extern gepubliceerdJa
Evenement1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
Duur: 5 apr 19997 apr 1999

Publicatie series

NaamMaterials Research Society Symposium - Proceedings
Volume568
ISSN van geprinte versie0272-9172

Congres

Congres1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing'
StadSan Francisco, CA, USA
Periode5/04/997/04/99

Vingerafdruk Duik in de onderzoeksthema's van 'Ostwald ripening of {113} defects precursors and transient enhanced diffusion'. Samen vormen ze een unieke vingerafdruk.

Citeer dit