Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

Stephen J. Sweeney; Peter J.A. Thijs

doi:10.1109/LEOS.2003.1253133

Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

Stephen J. Sweeney
, Peter J.A. Thijs

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

15 Citaten (Scopus)

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High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

Originele taal-2	Engels
Titel	2003 IEEE LEOS Annual Meeting Conference Proceedings
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	977-978
Aantal pagina's	2
ISBN van geprinte versie	0-7803-7888-1
DOI's	https://doi.org/10.1109/LEOS.2003.1253133
Status	Gepubliceerd - 9 dec. 2003
Extern gepubliceerd	Ja
Evenement	2003 IEEE LEOS Annual Meeting Conference - TUCSON, AZ, Verenigde Staten van Amerika Duur: 26 okt. 2003 → 30 okt. 2003

Congres

Congres	2003 IEEE LEOS Annual Meeting Conference
Land/Regio	Verenigde Staten van Amerika
Stad	TUCSON, AZ
Periode	26/10/03 → 30/10/03

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title = "Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers",

abstract = "High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.",

author = "Sweeney, \{Stephen J.\} and Thijs, \{Peter J.A.\}",

year = "2003",

month = dec,

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doi = "10.1109/LEOS.2003.1253133",

language = "English",

isbn = "0-7803-7888-1",

pages = "977--978",

booktitle = "2003 IEEE LEOS Annual Meeting Conference Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2003 IEEE LEOS Annual Meeting Conference ; Conference date: 26-10-2003 Through 30-10-2003",

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Sweeney, SJ & Thijs, PJA 2003, Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers. in 2003 IEEE LEOS Annual Meeting Conference Proceedings., 1253133, Institute of Electrical and Electronics Engineers, Piscataway, blz. 977-978, 2003 IEEE LEOS Annual Meeting Conference, TUCSON, AZ, Verenigde Staten van Amerika, 26/10/03. https://doi.org/10.1109/LEOS.2003.1253133

Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers. / Sweeney, Stephen J.; Thijs, Peter J.A.
2003 IEEE LEOS Annual Meeting Conference Proceedings. Piscataway: Institute of Electrical and Electronics Engineers, 2003. blz. 977-978 1253133.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

AU - Sweeney, Stephen J.

AU - Thijs, Peter J.A.

PY - 2003/12/9

Y1 - 2003/12/9

N2 - High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

AB - High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

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U2 - 10.1109/LEOS.2003.1253133

DO - 10.1109/LEOS.2003.1253133

M3 - Conference contribution

AN - SCOPUS:0345328266

SN - 0-7803-7888-1

SP - 977

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BT - 2003 IEEE LEOS Annual Meeting Conference Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2003 IEEE LEOS Annual Meeting Conference

Y2 - 26 October 2003 through 30 October 2003

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Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

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