Samenvatting
In this paper, we have created highly uniform one-dimensional single (In,Ga)As QD arrays on planar GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. During molecular beam epitaxy (MBE) of a strained (In,Ga)As/GaAs SL, elongated (In,Ga)As QDs develop into uniform QWR arrays with well-defined lateral periodicity. QWR formation relies on the anisotropic adatom surface migration and in desorption during annealing of the layers of elongated QDs after capping with a thin GaAs layer. The formation of highly uniform (In,Ga)As QD arrays with excellent PL properties is attributed to the smoothness of the strain field modulation on the dot-diameter and dot-to-dot distance length scales.
Originele taal-2 | Engels |
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Titel | Proceedings of the 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 200the |
Plaats van productie | Piscataway |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Pagina's | 694-695 |
Aantal pagina's | 2 |
ISBN van geprinte versie | 0-7803-7888-1 |
DOI's | |
Status | Gepubliceerd - 2003 |
Evenement | 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2003) - Tucson, Verenigde Staten van Amerika Duur: 26 okt. 2003 → 30 okt. 2003 Congresnummer: 16 |
Congres
Congres | 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2003) |
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Verkorte titel | LEOS 2003 |
Land/Regio | Verenigde Staten van Amerika |
Stad | Tucson |
Periode | 26/10/03 → 30/10/03 |
Ander | 16th Annual Meeting LEOS 2003, Tucson, Arizona |