Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

B. Jacobs, M.C.J.C.M. Krämer, E.J. Geluk, F. Karouta

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

84 Citaten (Scopus)
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We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.
Originele taal-2Engels
Pagina's (van-tot)15-18
Aantal pagina's4
TijdschriftJournal of Crystal Growth
Nummer van het tijdschrift1/2
StatusGepubliceerd - 2002

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