Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions

A. Yu Silov, V. M. Asnin, N. S. Averkiev, J. E.M. Haverkort, L. M. Weegels, G. Weimann, J. H. Wolter

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

20 Citaten (Scopus)

Samenvatting

We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.

Originele taal-2Engels
Pagina's (van-tot)7775-7779
Aantal pagina's5
TijdschriftJournal of Applied Physics
Volume73
Nummer van het tijdschrift11
DOI's
StatusGepubliceerd - 1 dec. 1993

Vingerafdruk

Duik in de onderzoeksthema's van 'Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions'. Samen vormen ze een unieke vingerafdruk.

Citeer dit