Optical detection of ballistically injected electrons in III/V heterostructures

M. Kemerink, K. Sauthoff, P.M. Koenraad, J.W. Gerritsen, H. Kempen, van, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We present a novel spectroscopic technique which is based on the ballistic injection of minority carriers from the tip of an STM into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tipsample bias, both the injection barrier height and the carrier relaxation rate F~ after injection can be determined. From current dependent measurements we find that carrier trapping by impurities causes a significant non-radiative recombination channel at room temperature.
Originele taal-2Engels
Titel25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan
RedacteurenN. Miura, T. Ando
Plaats van productieBerlin
UitgeverijSpringer
Pagina's819-820
ISBN van geprinte versie3-540-41778-8
StatusGepubliceerd - 2001
Evenement25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan
Duur: 17 sep 200022 sep 2000

Publicatie series

NaamSpringer Proceedings in Physics
Volume87
ISSN van geprinte versie0930-8989

Congres

Congres25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
LandJapan
StadOsaka
Periode17/09/0022/09/00
Ander25th Int. Conf. on the Physics of Semiconductors. Osaka, Japan

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