We present a novel spectroscopic technique which is based on the ballistic injection of minority carriers from the tip of an STM into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tipsample
bias, both the injection barrier height and the carrier relaxation rate F~ after injection can be determined. From current dependent measurements we find that carrier trapping by
impurities causes a significant non-radiative recombination channel at room temperature.
|Naam||Springer Proceedings in Physics|
|ISSN van geprinte versie||0930-8989|
|Congres||25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan|
|Periode||17/09/00 → 22/09/00|
|Ander||25th Int. Conf. on the Physics of Semiconductors. Osaka, Japan|