Optical and electronic properties of GaAs-based structures with columnar quantum dots

M. Motyka, G. Sek, K. Ryczko, J. Andrzejewski, J. Misiewicz, L. Li, A. Fiore, G. Patriarche

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

16 Citaten (Scopus)
177 Downloads (Pure)

Samenvatting

The electronic properties of a structure with columnar quantum dots obtained by close stacking of InAs submonolayers were studied by contactless electroreflectance (CER) and photoluminescence. These dots have an almost ideally rectangular cross section and uniform compn., which is promising for polarization independent gain. After energy level calcns. in the effective mass approxn. using compn. profiles obtained from cross-sectional TEM the part of the CER spectrum related to the 2-dimensional surrounding layer was explained and single heavy-hole-like and light-hole-like transitions related to the columnar dots identified, due to a single electron state confined in a shallow in-plane potential. [on SciFinder (R)]
Originele taal-2Engels
Artikelnummer181933
Pagina's (van-tot)181933-1/3
TijdschriftApplied Physics Letters
Volume90
Nummer van het tijdschrift18
DOI's
StatusGepubliceerd - 2007

Vingerafdruk

Duik in de onderzoeksthema's van 'Optical and electronic properties of GaAs-based structures with columnar quantum dots'. Samen vormen ze een unieke vingerafdruk.

Citeer dit