Operational stability of organic field-effect transistors

P.A. Bobbert, A. Sharma, S.G.J. Mathijssen, M. Kemerink, D.M. Leeuw, de

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

135 Citaties (Scopus)

Uittreksel

Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization. However, serious problems remain with the stability of OFETs under operation. The causes for this have remained elusive for many years. Surface potentiometry together with theoretical modeling provide new insights into the mechanisms limiting the operational stability. These indicate that redox reactions involving water are involved in an exchange of mobile charges in the semiconductor with protons in the gate dielectric. This mechanism elucidates the established key role of water and leads in a natural way to a universal "stress function", describing the stretched exponential-like time dependence ubiquitously observed. Further study is needed to determine the generality of the mechanism and the role of other mechanisms.
TaalEngels
Pagina's1146-1158
TijdschriftAdvanced Materials
Volume24
Nummer van het tijdschrift9
DOI's
StatusGepubliceerd - 2012

Vingerafdruk

Organic field effect transistors
Describing functions
Semiconducting organic compounds
Water
Redox reactions
Gate dielectrics
Protons
Ion exchange
Semiconductor materials
Costs

Citeer dit

Bobbert, P. A., Sharma, A., Mathijssen, S. G. J., Kemerink, M., & Leeuw, de, D. M. (2012). Operational stability of organic field-effect transistors. Advanced Materials, 24(9), 1146-1158. DOI: 10.1002/adma.201104580
Bobbert, P.A. ; Sharma, A. ; Mathijssen, S.G.J. ; Kemerink, M. ; Leeuw, de, D.M./ Operational stability of organic field-effect transistors. In: Advanced Materials. 2012 ; Vol. 24, Nr. 9. blz. 1146-1158
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Bobbert, PA, Sharma, A, Mathijssen, SGJ, Kemerink, M & Leeuw, de, DM 2012, 'Operational stability of organic field-effect transistors' Advanced Materials, vol. 24, nr. 9, blz. 1146-1158. DOI: 10.1002/adma.201104580

Operational stability of organic field-effect transistors. / Bobbert, P.A.; Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de, D.M.

In: Advanced Materials, Vol. 24, Nr. 9, 2012, blz. 1146-1158.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Bobbert PA, Sharma A, Mathijssen SGJ, Kemerink M, Leeuw, de DM. Operational stability of organic field-effect transistors. Advanced Materials. 2012;24(9):1146-1158. Beschikbaar vanaf, DOI: 10.1002/adma.201104580