On the variances of generation-recombination noise in a three-level system

F.N. Hooge, L. Ren

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4 Citaten (Scopus)

Samenvatting

A statistical treatment is given of the generation-recombination noise in a semiconductor with a conduction band and two traps X and Y. The system is described in terms of x and y, where x is half the harmonic mean of the numbers of occupied and empty traps X. A corresponding definition is given for y. The use of x and y makes the formalism very transparent. Simple, explicit relations are easily found, which can be further simplified by approximations depending on the ratios between N, x and y. We consider correlations and Burgess' theorem; time dependence and spectra are not discussed.
Originele taal-2Engels
Pagina's (van-tot)31-38
Aantal pagina's8
TijdschriftPhysica B: Condensed Matter
Volume193
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 1994

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