On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

R. J. Severens, M. C.M. van de Sanden, H. J.M. Verhoeven, J. Bastiaanssen, D. C. Schram

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Uittreksel

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

Originele taal-2Engels
TitelAmorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.
RedacteurenM. Hack
Plaats van productiePittsburgh, PA, USA
UitgeverijMaterials Research Society
Pagina's341-346
Aantal pagina's6
ISBN van geprinte versie1-55899-323-1
DOI's
StatusGepubliceerd - 1 dec 1996
EvenementAmorphous Silicon Technology 1996, April 8-12, 1996, San Francisco, CA, USA - San Francisco, CA, Verenigde Staten van Amerika
Duur: 8 apr 199612 apr 1996

Publicatie series

NaamMaterials Research Society Symposium - Proceedings
Volume420
ISSN van geprinte versie0272-9172

Congres

CongresAmorphous Silicon Technology 1996, April 8-12, 1996, San Francisco, CA, USA
LandVerenigde Staten van Amerika
StadSan Francisco, CA
Periode8/04/9612/04/96
AnderSpring '96 ; MRS 1996 Spring meeting April 8-12, 1996 San Francisco

Vingerafdruk

Plasma Gases
thermal plasmas
silanes
Silanes
Hydrogen
Plasmas
argon plasma
hydrogen plasma
Substrates
hydrogen
vacuum chambers
plasma jets
nozzles
amorphous silicon
Thermal desorption
Plasma jets
Physisorption
Dangling bonds
flow velocity
arcs

Citeer dit

Severens, R. J., van de Sanden, M. C. M., Verhoeven, H. J. M., Bastiaanssen, J., & Schram, D. C. (1996). On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. In M. Hack (editor), Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A. (blz. 341-346). (Materials Research Society Symposium - Proceedings; Vol. 420). Pittsburgh, PA, USA: Materials Research Society. https://doi.org/10.1557/PROC-420-341
Severens, R. J. ; van de Sanden, M. C.M. ; Verhoeven, H. J.M. ; Bastiaanssen, J. ; Schram, D. C. / On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. redacteur / M. Hack. Pittsburgh, PA, USA : Materials Research Society, 1996. blz. 341-346 (Materials Research Society Symposium - Proceedings).
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abstract = "Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.",
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Severens, RJ, van de Sanden, MCM, Verhoeven, HJM, Bastiaanssen, J & Schram, DC 1996, On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. in M Hack (redactie), Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. Materials Research Society Symposium - Proceedings, vol. 420, Materials Research Society, Pittsburgh, PA, USA, blz. 341-346, Amorphous Silicon Technology 1996, April 8-12, 1996, San Francisco, CA, USA, San Francisco, CA, Verenigde Staten van Amerika, 8/04/96. https://doi.org/10.1557/PROC-420-341

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. / Severens, R. J.; van de Sanden, M. C.M.; Verhoeven, H. J.M.; Bastiaanssen, J.; Schram, D. C.

Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. redactie / M. Hack. Pittsburgh, PA, USA : Materials Research Society, 1996. blz. 341-346 (Materials Research Society Symposium - Proceedings; Vol. 420).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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AU - Severens, R. J.

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AU - Verhoeven, H. J.M.

AU - Bastiaanssen, J.

AU - Schram, D. C.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

AB - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

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M3 - Conference contribution

SN - 1-55899-323-1

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EP - 346

BT - Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.

A2 - Hack, M.

PB - Materials Research Society

CY - Pittsburgh, PA, USA

ER -

Severens RJ, van de Sanden MCM, Verhoeven HJM, Bastiaanssen J, Schram DC. On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. In Hack M, redacteur, Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. Pittsburgh, PA, USA: Materials Research Society. 1996. blz. 341-346. (Materials Research Society Symposium - Proceedings). https://doi.org/10.1557/PROC-420-341