Observation and modeling of long-wavelength InAs/InP (100) quantum dot amplifier small signal gain spectra

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

50 Downloads (Pure)

Samenvatting

Measured gain spectra from InAs/InP (100) quantum-dot amplifiers have been analyzed with a quantum-dot rate-equation model. The amplifiers are fabricated to have a peak gain wavelength around 1700nm. Our comparison between measured and simulated gain spectra shows that two effects in the quantum-dot material introduce the 65 nm blue shift and change in shape that have been observed in the measured gain spectrum with an increase in injection current density from 1000A/cm2 to 3000A/cm2. The first effect is the shift from GS to ES, and the second effect the dot size dependent filling due to the dot size dependent escape rates.
Originele taal-2Engels
TitelProceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium
RedacteurenSt. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert
Plaats van productieBrussels
UitgeverijBrussels University Press
Pagina's169-172
ISBN van geprinte versie978-90-5487-650-2
StatusGepubliceerd - 2009
Evenement14th Annual Symposium of the IEEE Photonics Benelux Chapter - Brussels, België
Duur: 5 nov. 20096 nov. 2009
Congresnummer: 14

Congres

Congres14th Annual Symposium of the IEEE Photonics Benelux Chapter
Land/RegioBelgië
StadBrussels
Periode5/11/096/11/09
AnderIEEE Photonics Benelux Chapter

Vingerafdruk

Duik in de onderzoeksthema's van 'Observation and modeling of long-wavelength InAs/InP (100) quantum dot amplifier small signal gain spectra'. Samen vormen ze een unieke vingerafdruk.

Citeer dit