Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots

V. Jovanov, T. Eissfeller, S. Kapfinger, E.C. Clark, F. Klotz, M. Bichler, J.G. Keizer, P.M. Koenraad, G. Abstreiter, J.J. Finley

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Samenvatting

Strong electrically tunable exciton g factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight-band k·p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, dc Stark shift, diamagnetic shift, and g factor tunability for model dots with the measured size and a comparatively low In composition of xIn~35% near the dot apex. We show that the observed g factor tunability is dominated by the hole, with the electron contributing only weakly. The electric-field-induced perturbation of the hole wave function is shown to impact upon the g factor via orbital angular momentum quenching, with the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g factor modulation.
Originele taal-2Engels
Artikelnummer161303
Pagina's (van-tot)161303-1/4
Aantal pagina's4
TijdschriftPhysical Review B: Condensed Matter
Volume83
Nummer van het tijdschrift16
DOI's
StatusGepubliceerd - 2011

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