Nucleation phenomena during titanium silicon reaction

I.J.M.M. Raaijmakers, L.J. IJzendoorn, van, A.M.L. Theunissen, Ki-Bum Kim

    Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review


    It is known that thermal annealing of Ti and amorphous (alpha) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.
    Originele taal-2Engels
    TitelRapid thermal annealing/ chemical vapor deposition and integrated processing : symposium, held April 25-28, San Diego, California, USA
    RedacteurenD. Hodul, J.C. Gelpey, M.L. Green
    Plaats van productiePittsburgh
    UitgeverijMaterials Research Society
    ISBN van geprinte versie1-55899-019-4
    StatusGepubliceerd - 1989

    Publicatie series

    NaamMaterials Research Society Symposium Proceedings
    ISSN van geprinte versie0272-9172


    Duik in de onderzoeksthema's van 'Nucleation phenomena during titanium silicon reaction'. Samen vormen ze een unieke vingerafdruk.

    Citeer dit