Novel damage model for delamination in Cu/low-k IC backend structures

M. A.J. Van Gils, O. Van Der Sluis, G. Q. Zhang, J. H.J. Janssen, R. M.J. Voncken

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

4 Citaten (Scopus)

Samenvatting

For the development of state-of-the-art Cu/low-k CMOS technologies, the integration and introduction of new low-k materials are one of the major bottlenecks due to the bad thermal and mechanical integrity of these materials and the inherited weak interfacial adhesion. Especially the forces resulting from packaging related processes such as dicing, wire bonding, bumping and molding are critical and can easily result in cracking, delamination and chipping of the IC back-end structure if no appropriate measures are taken. This paper presents a methodology for optimizing the thermo-mechanical reliability of bond pads by using a 3D multi-level Finite Element approach. An important characteristic of this methodology is the use of a novel energy-based damage model, which allows a fast qualitative comparison of different back-end structures. The usability of the methodology will be illustrated by the comparison of three different bond pad structures.

Originele taal-2Engels
TitelProceedings Electronic Components and Technology, 2005. ECTC '05
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's988-994
Aantal pagina's7
ISBN van geprinte versie0-7803-8907-7
DOI's
StatusGepubliceerd - 19 sep 2005
Evenement55th Electronic Components and Technology Conference, ECTC - Lake Buena Vista, FL, Verenigde Staten van Amerika
Duur: 31 mei 20054 jun 2005

Congres

Congres55th Electronic Components and Technology Conference, ECTC
Land/RegioVerenigde Staten van Amerika
StadLake Buena Vista, FL
Periode31/05/054/06/05

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