Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

R.W. van der Heijden; G. Chen; A.T. de Waele; H.M. Gijsman; F.P.B. Tielen

doi:10.1080/13642819208204925

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

R.W. van der Heijden
, G. Chen
, A.T. de Waele
, H.M. Gijsman
, F.P.B. Tielen

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

6 Citaten (Scopus)

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Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.

Originele taal-2	Engels
Pagina's (van-tot)	849-853
Aantal pagina's	5
Tijdschrift	Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties
Volume	65
Nummer van het tijdschrift	4
DOI's	https://doi.org/10.1080/13642819208204925
Status	Gepubliceerd - apr. 1992

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van der Heijden, R. W., Chen, G., de Waele, A. T., Gijsman, H. M., & Tielen, F. P. B. (1992). Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime. Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, 65(4), 849-853. https://doi.org/10.1080/13642819208204925

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title = "Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime",

abstract = "Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10\% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.",

author = "\{van der Heijden\}, R.W. and G. Chen and \{de Waele\}, A.T. and H.M. Gijsman and F.P.B. Tielen",

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van der Heijden, RW, Chen, G, de Waele, AT, Gijsman, HM & Tielen, FPB 1992, 'Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime', Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, vol. 65, nr. 4, blz. 849-853. https://doi.org/10.1080/13642819208204925

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime. / van der Heijden, R.W.; Chen, G.; de Waele, A.T. et al.
In: Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, Vol. 65, Nr. 4, 04.1992, blz. 849-853.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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AU - van der Heijden, R.W.

AU - Chen, G.

AU - de Waele, A.T.

AU - Gijsman, H.M.

AU - Tielen, F.P.B.

PY - 1992/4

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AB - Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.

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JF - Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties

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Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

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