TY - JOUR
T1 - Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime
AU - van der Heijden, R.W.
AU - Chen, G.
AU - de Waele, A.T.
AU - Gijsman, H.M.
AU - Tielen, F.P.B.
PY - 1992/4
Y1 - 1992/4
N2 - Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.
AB - Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.
UR - http://www.scopus.com/inward/record.url?scp=3342974528&partnerID=8YFLogxK
U2 - 10.1080/13642819208204925
DO - 10.1080/13642819208204925
M3 - Article
AN - SCOPUS:3342974528
SN - 1364-2812
VL - 65
SP - 849
EP - 853
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 4
ER -