Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field

Niels van Hoof, Stan ter Huurne, Matteo Parente, Andrea Baldi, Jaime Gomez-Rivas

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Samenvatting

The capability of THz-time domain spectroscopy (TDS) for the non-invasive extraction of the conductive properties of metal and semiconductor surfaces is essential for advancements in material science and device analysis. Here, we demonstrate that this technique can be successfully applied to image and analyze sub-diffraction inhomogeneities using THz near-field microscopy. Additionally, a novel total internal reflection geometry enables time-resolved THz time-domain near-field microscopy using ultrashort optical pulses on photoexcited semiconducting materials with a resolution of < 50~ mu { mathrm{ m}}.

Originele taal-2Engels
Titel2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Plaats van productiePiscataway
UitgeverijIEEE Computer Society
Aantal pagina's2
ISBN van elektronische versie978-1-5386-8285-2
DOI's
StatusGepubliceerd - sep 2019
Evenement44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, Frankrijk
Duur: 1 sep 20196 sep 2019

Congres

Congres44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
LandFrankrijk
StadParis
Periode1/09/196/09/19

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  • Citeer dit

    van Hoof, N., ter Huurne, S., Parente, M., Baldi, A., & Gomez-Rivas, J. (2019). Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field. In 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves [8874434] IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2019.8874434