TY - ADVS
T1 - New patterning paradigm? : selective deposition may be the way forward to the far reaches of device scaling after 7nm.
AU - Lapedus, M.
AU - Kessels, W.M.M.
PY - 2015
Y1 - 2015
N2 - The Eindhoven University of Technology, for one, is working on another approach—direct-write ALD. This is based on an area-selective ALD by an area-activation technique. This makes use of electron-beam induced deposition (EBID) or ion-beam induced deposition (IBID). "We combine the advantages of electron-beam patterning with the advantages of ALD," said Erwin Kessels, a professor at the Eindhoven University of Technology. "The patterning by the e-beam can take place in a SEM system, but it can also be done in a multi-electron beam system."
AB - The Eindhoven University of Technology, for one, is working on another approach—direct-write ALD. This is based on an area-selective ALD by an area-activation technique. This makes use of electron-beam induced deposition (EBID) or ion-beam induced deposition (IBID). "We combine the advantages of electron-beam patterning with the advantages of ALD," said Erwin Kessels, a professor at the Eindhoven University of Technology. "The patterning by the e-beam can take place in a SEM system, but it can also be done in a multi-electron beam system."
UR - http://semiengineering.com/new-patterning-paradigm/
M3 - Web publication/site
PB - Semiconductor Engineering
CY - S.l.
ER -