Neutron-induced failure in super-junction, IGBT, and SiC power devices

A. Griffoni, J. Duivenbode, van, D. Linten, E. Simoen, P. Rech, L. Dilillo, F. Wrobel, P. Verbist, G. Groeseneken

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

5 Citaten (Scopus)
2 Downloads (Pure)

Samenvatting

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Originele taal-2Engels
TitelProceedings of 12th European Conference on Radiation Effects on Components and Systems(Radecs), 19-23 September 2011, Sevilla, Spain
UitgeverijInstitute of Electrical and Electronics Engineers
ISBN van geprinte versie978-1-4577-0585-4
DOI's
StatusGepubliceerd - 2011
Evenementconference; Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on; 2011-09-19; 2011-09-23 -
Duur: 19 sep 201123 sep 2011

Congres

Congresconference; Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on; 2011-09-19; 2011-09-23
Periode19/09/1123/09/11
AnderRadiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

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  • Citeer dit

    Griffoni, A., Duivenbode, van, J., Linten, D., Simoen, E., Rech, P., Dilillo, L., Wrobel, F., Verbist, P., & Groeseneken, G. (2011). Neutron-induced failure in super-junction, IGBT, and SiC power devices. In Proceedings of 12th European Conference on Radiation Effects on Components and Systems(Radecs), 19-23 September 2011, Sevilla, Spain Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RADECS.2011.6131395