Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

J.J.H. Gielis; B. Hoex; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.2985906

Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

J.J.H. Gielis
, B. Hoex
, M.C.M. Sanden, van de
, W.M.M. Kessels

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Thin films of Al 2 O 3 synthesized by atomic layer deposition provide an excellent level of interfacepassivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al 2 O 3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al 2 O 3 interfaces by optical second-harmonic generation (SHG).SHG has revealed a negative fixed charge density in as-deposited Al 2 O 3 on the order of 10 11 cm -2 that increased to 10 12 –10 13 cm -2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al 2 O 3 conduction band offset of 2.02±0.04 eV .

Originele taal-2	Engels
Artikelnummer	073701
Pagina's (van-tot)	073701-1/5
Aantal pagina's	5
Tijdschrift	Journal of Applied Physics
Volume	104
Nummer van het tijdschrift	7
DOI's	https://doi.org/10.1063/1.2985906
Status	Gepubliceerd - 2008

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@article{42582713e9e14177a98a2d88cb21d8bc,

title = "Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation",

abstract = "Thin films of Al 2 O 3 synthesized by atomic layer deposition provide an excellent level of interfacepassivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al 2 O 3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al 2 O 3 interfaces by optical second-harmonic generation (SHG).SHG has revealed a negative fixed charge density in as-deposited Al 2 O 3 on the order of 10 11 cm -2 that increased to 10 12 –10 13 cm -2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al 2 O 3 conduction band offset of 2.02±0.04 eV .",

author = "J.J.H. Gielis and B. Hoex and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

year = "2008",

doi = "10.1063/1.2985906",

language = "English",

volume = "104",

pages = "073701--1/5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

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TY - JOUR

T1 - Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

AU - Gielis, J.J.H.

AU - Hoex, B.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

N2 - Thin films of Al 2 O 3 synthesized by atomic layer deposition provide an excellent level of interfacepassivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al 2 O 3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al 2 O 3 interfaces by optical second-harmonic generation (SHG).SHG has revealed a negative fixed charge density in as-deposited Al 2 O 3 on the order of 10 11 cm -2 that increased to 10 12 –10 13 cm -2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al 2 O 3 conduction band offset of 2.02±0.04 eV .

AB - Thin films of Al 2 O 3 synthesized by atomic layer deposition provide an excellent level of interfacepassivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al 2 O 3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al 2 O 3 interfaces by optical second-harmonic generation (SHG).SHG has revealed a negative fixed charge density in as-deposited Al 2 O 3 on the order of 10 11 cm -2 that increased to 10 12 –10 13 cm -2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al 2 O 3 conduction band offset of 2.02±0.04 eV .

U2 - 10.1063/1.2985906

DO - 10.1063/1.2985906

M3 - Article

SN - 0021-8979

VL - 104

SP - 073701-1/5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073701

ER -

Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

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