Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

A. Perrotta, C. Fuentes-Hernandez, T.M. Khan, B. Kippelen, M. Creatore, S. Graham

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Uittreksel

Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30°C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.

Originele taal-2Engels
Artikelnummer024003
Pagina's (van-tot)1-13
Aantal pagina's13
TijdschriftJournal of Physics D: Applied Physics
Volume50
Nummer van het tijdschrift2
Vroegere onlinedatum2016
DOI's
StatusGepubliceerd - 18 jan 2017

Vingerafdruk

Atomic layer deposition
atomic layer epitaxy
Encapsulation
Plasmas
room temperature
Temperature
Free volume
infiltration
Infiltration
Spectroscopic ellipsometry
Plasma enhanced chemical vapor deposition
Photoelectron spectroscopy
organic materials
shelves
Permeation
x ray spectroscopy
ellipsometry
Multilayers
Porosity
photoelectron spectroscopy

Citeer dit

Perrotta, A. ; Fuentes-Hernandez, C. ; Khan, T.M. ; Kippelen, B. ; Creatore, M. ; Graham, S. / Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, Nr. 2. blz. 1-13.
@article{232217a23d574158b0f095b82baf45e0,
title = "Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques",
abstract = "Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30°C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.",
keywords = "direct encapsulation, ellipsometric porosimetry, moisture permeation barrier, OPV, plasma-assisted ALD, spectroscopic ellipsometry",
author = "A. Perrotta and C. Fuentes-Hernandez and T.M. Khan and B. Kippelen and M. Creatore and S. Graham",
year = "2017",
month = "1",
day = "18",
doi = "10.1088/1361-6463/50/2/024003",
language = "English",
volume = "50",
pages = "1--13",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "Institute of Physics",
number = "2",

}

Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques. / Perrotta, A.; Fuentes-Hernandez, C.; Khan, T.M.; Kippelen, B.; Creatore, M.; Graham, S.

In: Journal of Physics D: Applied Physics, Vol. 50, Nr. 2, 024003, 18.01.2017, blz. 1-13.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

AU - Perrotta, A.

AU - Fuentes-Hernandez, C.

AU - Khan, T.M.

AU - Kippelen, B.

AU - Creatore, M.

AU - Graham, S.

PY - 2017/1/18

Y1 - 2017/1/18

N2 - Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30°C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.

AB - Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30°C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.

KW - direct encapsulation

KW - ellipsometric porosimetry

KW - moisture permeation barrier

KW - OPV

KW - plasma-assisted ALD

KW - spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=85011949806&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/50/2/024003

DO - 10.1088/1361-6463/50/2/024003

M3 - Article

AN - SCOPUS:85011949806

VL - 50

SP - 1

EP - 13

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 2

M1 - 024003

ER -