Near-field optical imaging and spectroscopy of single GaAs quantum wires

V. Emiliani; F. Intonti; Ch. Lienau; T. Elsaesser; R. Nötzel; K.H. Ploog

doi:10.1002/1521-396X(200204)190:3<749::AID-PSSA749>3.0.CO;2-S

Near-field optical imaging and spectroscopy of single GaAs quantum wires

V. Emiliani, F. Intonti, Ch. Lienau, T. Elsaesser, R. Nötzel, K.H. Ploog

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.

Originele taal-2	Engels
Pagina's (van-tot)	749-753
Tijdschrift	Physica Status Solidi A : Applied Research
Volume	190
Nummer van het tijdschrift	3
DOI's	https://doi.org/10.1002/1521-396X(200204)190:3<749::AID-PSSA749>3.0.CO;2-S
Status	Gepubliceerd - 2002

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10.1002/1521-396X(200204)190:3<749::AID-PSSA749>3.0.CO;2-S

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abstract = "Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.",

author = "V. Emiliani and F. Intonti and Ch. Lienau and T. Elsaesser and R. N{\"o}tzel and K.H. Ploog",

year = "2002",

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T1 - Near-field optical imaging and spectroscopy of single GaAs quantum wires

AU - Emiliani, V.

AU - Intonti, F.

AU - Lienau, Ch.

AU - Elsaesser, T.

AU - Nötzel, R.

AU - Ploog, K.H.

PY - 2002

Y1 - 2002

N2 - Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.

AB - Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.

U2 - 10.1002/1521-396X(200204)190:3<749::AID-PSSA749>3.0.CO;2-S

DO - 10.1002/1521-396X(200204)190:3<749::AID-PSSA749>3.0.CO;2-S

M3 - Article

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EP - 753

JO - Physica Status Solidi A : Applied Research

JF - Physica Status Solidi A : Applied Research

IS - 3

ER -

Near-field optical imaging and spectroscopy of single GaAs quantum wires

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