Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

C. Robert, C. Cornet, K.P. da Silva, G. Turban, S.J.C. Mauger, T.N. Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, N. Goni, N. Bertru, O. DurandA. Corre, Le

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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Samenvatting

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.
Originele taal-2Engels
TitelThe 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe
Plaats van productieNew York
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-2
ISBN van geprinte versie978-1-4673-6132-3
StatusGepubliceerd - 2013
Evenement25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan
Duur: 19 mei 201323 mei 2013
Congresnummer: 25

Congres

Congres25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Verkorte titelIPRM 2013
LandJapan
StadKobe
Periode19/05/1323/05/13
Ander25th International Conference on Indium Phosphide and Related materials (IPRM)

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