Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

C. Robert; C. Cornet; K.P. da Silva; G. Turban; S.J.C. Mauger; T.N. Thanh; J. Even; J.M. Jancu; M. Perrin; H. Folliot; T. Rohel; S. Tricot; A. Balocchi; P. Barate; X. Marie; P.M. Koenraad; M.I. Alonso; N. Goni; N. Bertru; O. Durand; A. Corre, Le

Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

C. Robert, C. Cornet, K.P. da Silva, G. Turban, S.J.C. Mauger, T.N. Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, N. Goni, N. Bertru, O. DurandA. Corre, Le

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The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

Originele taal-2	Engels
Titel	The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe
Plaats van productie	New York
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1-2
ISBN van geprinte versie	978-1-4673-6132-3
Status	Gepubliceerd - 2013
Evenement	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan Duur: 19 mei 2013 → 23 mei 2013 Congresnummer: 25

Congres

Congres	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Verkorte titel	IPRM 2013
Land/Regio	Japan
Stad	Kobe
Periode	19/05/13 → 23/05/13
Ander	25th International Conference on Indium Phosphide and Related materials (IPRM)

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Robert, C., Cornet, C., da Silva, K. P., Turban, G., Mauger, S. J. C., Thanh, T. N., Even, J., Jancu, J. M., Perrin, M., Folliot, H., Rohel, T., Tricot, S., Balocchi, A., Barate, P., Marie, X., Koenraad, P. M., Alonso, M. I., Goni, N., Bertru, N., ... Corre, Le, A. (2013). Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. In The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe (blz. 1-2). Institute of Electrical and Electronics Engineers.

Robert, C. ; Cornet, C. ; da Silva, K.P. et al. / Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe. New York : Institute of Electrical and Electronics Engineers, 2013. blz. 1-2

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title = "Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation",

abstract = "The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.",

author = "C. Robert and C. Cornet and {da Silva}, K.P. and G. Turban and S.J.C. Mauger and T.N. Thanh and J. Even and J.M. Jancu and M. Perrin and H. Folliot and T. Rohel and S. Tricot and A. Balocchi and P. Barate and X. Marie and P.M. Koenraad and M.I. Alonso and N. Goni and N. Bertru and O. Durand and {Corre, Le}, A.",

year = "2013",

language = "English",

isbn = "978-1-4673-6132-3",

pages = "1--2",

booktitle = "The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

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Robert, C, Cornet, C, da Silva, KP, Turban, G, Mauger, SJC, Thanh, TN, Even, J, Jancu, JM, Perrin, M, Folliot, H, Rohel, T, Tricot, S, Balocchi, A, Barate, P, Marie, X, Koenraad, PM, Alonso, MI, Goni, N, Bertru, N, Durand, O & Corre, Le, A 2013, Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. in The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe. Institute of Electrical and Electronics Engineers, New York, blz. 1-2, 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), Kobe, Japan, 19/05/13.

Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. / Robert, C.; Cornet, C.; da Silva, K.P. et al.
The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe. New York: Institute of Electrical and Electronics Engineers, 2013. blz. 1-2.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic

TY - GEN

T1 - Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

AU - Robert, C.

AU - Cornet, C.

AU - da Silva, K.P.

AU - Turban, G.

AU - Mauger, S.J.C.

AU - Thanh, T.N.

AU - Even, J.

AU - Jancu, J.M.

AU - Perrin, M.

AU - Folliot, H.

AU - Rohel, T.

AU - Tricot, S.

AU - Balocchi, A.

AU - Barate, P.

AU - Marie, X.

AU - Koenraad, P.M.

AU - Alonso, M.I.

AU - Goni, N.

AU - Bertru, N.

AU - Durand, O.

AU - Corre, Le, A.

N1 - Conference code: 25

PY - 2013

Y1 - 2013

N2 - The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

AB - The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

M3 - Conference contribution

SN - 978-1-4673-6132-3

SP - 1

EP - 2

BT - The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe

PB - Institute of Electrical and Electronics Engineers

CY - New York

T2 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)

Y2 - 19 May 2013 through 23 May 2013

ER -

Robert C, Cornet C, da Silva KP, Turban G, Mauger SJC, Thanh TN et al. Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. In The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe. New York: Institute of Electrical and Electronics Engineers. 2013. blz. 1-2

Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

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