Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

J. Löffler; R.E.I. Schropp; R. Groenen; M.C.M. van de Sanden; J.L. Linden

doi:10.1109/PVSC.2000.916027

Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

J. Löffler, R.E.I. Schropp, R. Groenen, M.C.M. van de Sanden, J.L. Linden

Plasma & Materials Processing

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

3 Citaten (Scopus)

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Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO₂:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO₂:F.

Originele taal-2	Engels
Titel	Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	892-895
Aantal pagina's	4
ISBN van geprinte versie	0780357728
DOI's	https://doi.org/10.1109/PVSC.2000.916027
Status	Gepubliceerd - 1 jan. 2000
Evenement	28th IEEE Photovoltaic Specialists Conference (PVSC 2000) - Anchorage Hilton Hotel, Anchorage, Verenigde Staten van Amerika Duur: 15 sep. 2000 → 22 sep. 2000 Congresnummer: 28

Congres

Congres	28th IEEE Photovoltaic Specialists Conference (PVSC 2000)
Verkorte titel	PSVC 2000
Land/Regio	Verenigde Staten van Amerika
Stad	Anchorage
Periode	15/09/00 → 22/09/00
Ander	PVSC : IEEE Photovoltaic Specialists Conference ; 28 (Anchorage, Alas.) : 2000.09.15-22

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10.1109/PVSC.2000.916027

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Löffler, J., Schropp, R. E. I., Groenen, R., van de Sanden, M. C. M., & Linden, J. L. (2000). Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 (blz. 892-895). Artikel 916027 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2000.916027

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title = "Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells",

abstract = "Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F.",

author = "J. L{\"o}ffler and R.E.I. Schropp and R. Groenen and {van de Sanden}, M.C.M. and J.L. Linden",

year = "2000",

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booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "28th IEEE Photovoltaic Specialists Conference (PVSC 2000), PSVC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

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Löffler, J, Schropp, REI, Groenen, R, van de Sanden, MCM & Linden, JL 2000, Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells. in Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000., 916027, Institute of Electrical and Electronics Engineers, Piscataway, blz. 892-895, 28th IEEE Photovoltaic Specialists Conference (PVSC 2000), Anchorage, Alaska, Verenigde Staten van Amerika, 15/09/00. https://doi.org/10.1109/PVSC.2000.916027

Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells. / Löffler, J.; Schropp, R.E.I.; Groenen, R. et al.
Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Piscataway: Institute of Electrical and Electronics Engineers, 2000. blz. 892-895 916027.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AB - Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F.

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Löffler J, Schropp REI, Groenen R, van de Sanden MCM, Linden JL. Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Piscataway: Institute of Electrical and Electronics Engineers. 2000. blz. 892-895. 916027 doi: 10.1109/PVSC.2000.916027

Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

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