Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

A. Gaggero; S. Jahanmirinejad; F. Marsili; F. Mattioli; R. Leoni; D. Bitauld; D. Sahin; G.J. Hamhuis; R. Nötzel; R. Sanjines; A. Fiore

doi:10.1063/1.3496457

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

A. Gaggero, S. Jahanmirinejad, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G.J. Hamhuis, R. Nötzel, R. Sanjines, A. Fiore

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

Originele taal-2	Engels
Artikelnummer	151108
Pagina's (van-tot)	151108-1/3
Aantal pagina's	3
Tijdschrift	Applied Physics Letters
Volume	97
Nummer van het tijdschrift	15
DOI's	https://doi.org/10.1063/1.3496457
Status	Gepubliceerd - 2010

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title = "Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications",

abstract = "We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.",

author = "A. Gaggero and S. Jahanmirinejad and F. Marsili and F. Mattioli and R. Leoni and D. Bitauld and D. Sahin and G.J. Hamhuis and R. N{\"o}tzel and R. Sanjines and A. Fiore",

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doi = "10.1063/1.3496457",

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T1 - Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

AU - Gaggero, A.

AU - Jahanmirinejad, S.

AU - Marsili, F.

AU - Mattioli, F.

AU - Leoni, R.

AU - Bitauld, D.

AU - Sahin, D.

AU - Hamhuis, G.J.

AU - Nötzel, R.

AU - Sanjines, R.

AU - Fiore, A.

PY - 2010

Y1 - 2010

N2 - We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

AB - We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

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DO - 10.1063/1.3496457

M3 - Article

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SP - 151108-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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ER -

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

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