Samenvatting
A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro eV) at ultralow currents, which are assigned to the emission from single excitons and multiexcitons. This approach, which enables the fabrication of efficient nanoscale active devices at 1300 nm, can provide single-photon-emitting diodes for fiber-based quantum cryptog. [on SciFinder (R)]
Originele taal-2 | Engels |
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Pagina's (van-tot) | 1464-1467 |
Tijdschrift | Nano Letters |
Volume | 6 |
Nummer van het tijdschrift | 7 |
DOI's | |
Status | Gepubliceerd - 2006 |