Nanoscale Fet

R. Surdeanu (Uitvinder), P. Agarwal (Uitvinder), A.R. Balkenende (Uitvinder), E.P.A.M. Bakkers (Uitvinder)

Onderzoeksoutput: OctrooiOctrooi-publicatie

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Samenvatting

A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source ( 20 ) and drain ( 26 ) regions are formed of nanowire ania the channel region ( 24 ) is in the form of a nanotube. An insulated gate ( 32 ) is provided adjacent to the channel region ( 24 ) for controlling conduction i ni the channel region between the source and drain regions.
Originele taal-2Engels
OctrooinummerUS20070262397
StatusGepubliceerd - 15 nov 2007

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  • Citeer dit

    Surdeanu, R., Agarwal, P., Balkenende, A. R., & Bakkers, E. P. A. M. (2007). Nanoscale Fet. (Octrooi Nr. US20070262397).