A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only 10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.
Mackus, A. J. M., Dielissen, S. A. F., Mulders, J. J. L., & Kessels, W. M. M. (2012). Nanopattering by direct-write atomic layer deposition. Special Publication - Royal Society of Chemistry, 4(15), 4477-4480. https://doi.org/10.1039/C2NR30664F