MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

J.J.M. Binsma, M. Geemert, van, F. Heinrichsdorff, T. Dongen, van, R.G. Broeke, E.A.J.M. Bente, M.K. Smit

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Samenvatting

InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.
Originele taal-2Engels
TitelProceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
RedacteurenF. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Plaats van productieBrussels, Belgium
UitgeverijIEEE/LEOS
Pagina's245-249
ISBN van geprinte versie90-5487247-0
StatusGepubliceerd - 2001
Evenement6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, België
Duur: 3 dec 20013 dec 2001
Congresnummer: 6

Congres

Congres6th Annual Symposium of the IEEE/LEOS Benelux Chapter
LandBelgië
StadBrussels
Periode3/12/013/12/01
Ander6th Ann. Symp. of the IEEE/LEOS Benelux Chapter

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Binsma, J. J. M., Geemert, van, M., Heinrichsdorff, F., Dongen, van, T., Broeke, R. G., Bente, E. A. J. M., & Smit, M. K. (2001). MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. In F. Berghmans, H. Thienpont, J. Danckaert, & L. Desmet (editors), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium (blz. 245-249). Brussels, Belgium: IEEE/LEOS.