Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

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Samenvatting

This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.
Originele taal-2Engels
Titel2023 Opto-Electronics and Communications Conference (OECC)
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's3
ISBN van elektronische versie978-1-6654-6213-6
DOI's
StatusGepubliceerd - 14 aug. 2023
Evenement28th Opto-Electronics and Communications Conference (OECC 2023) - Shanghai, China
Duur: 2 jul. 20236 jul. 2023
Congresnummer: 28
https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding

Congres

Congres28th Opto-Electronics and Communications Conference (OECC 2023)
Verkorte titelOECC 2023
Land/RegioChina
StadShanghai
Periode2/07/236/07/23
Internet adres

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  • 5G STEP FWD

    Tafur Monroy, I. (Project Manager), Witteveen, F. (Projectmedewerker), Konstantinou, D. (Projectmedewerker), Perez Santacruz, J. (Projectmedewerker), Sanders, R. (Project communicatie medewerker), Rommel, S. (Projectmedewerker) & Tafur Monroy, I. (Projectmedewerker)

    1/06/171/05/23

    Project: Onderzoek direct

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