Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Jasper de Graaf; Dimitrios Konstantinou; Simon Rommel; Kevin A. Williams; Idelfonso Tafur Monroy; Yuqing Jiao

doi:10.1109/OECC56963.2023.10209767

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Jasper de Graaf, Dimitrios Konstantinou, Simon Rommel, Kevin A. Williams, Idelfonso Tafur Monroy, Yuqing Jiao

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.

Originele taal-2	Engels
Titel	2023 Opto-Electronics and Communications Conference (OECC)
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	3
ISBN van elektronische versie	978-1-6654-6213-6
DOI's	https://doi.org/10.1109/OECC56963.2023.10209767
Status	Gepubliceerd - 14 aug. 2023
Evenement	28th Opto-Electronics and Communications Conference (OECC 2023) - Shanghai, China Duur: 2 jul. 2023 → 6 jul. 2023 Congresnummer: 28 https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding

Congres

Congres	28th Opto-Electronics and Communications Conference (OECC 2023)
Verkorte titel	OECC 2023
Land/Regio	China
Stad	Shanghai
Periode	2/07/23 → 6/07/23
Internet adres	https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding

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10.1109/OECC56963.2023.10209767

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5G STEP FWD
Tafur Monroy, I. (Project Manager), Witteveen, F. (Projectmedewerker), Konstantinou, D. (Projectmedewerker), Perez Santacruz, J. (Projectmedewerker), Sanders, R. (Project communicatie medewerker), Rommel, S. (Projectmedewerker) & Tafur Monroy, I. (Projectmedewerker)
1/06/17 → 1/05/23
Project: Onderzoek direct

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title = "Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications",

abstract = "This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.",

keywords = "UTC-PD, monolithic integration, V-band, beyond-5G, microwave photonics",

author = "{de Graaf}, Jasper and Dimitrios Konstantinou and Simon Rommel and Williams, {Kevin A.} and {Tafur Monroy}, Idelfonso and Yuqing Jiao",

year = "2023",

month = aug,

day = "14",

doi = "10.1109/OECC56963.2023.10209767",

language = "English",

booktitle = "2023 Opto-Electronics and Communications Conference (OECC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "28th Opto-Electronics and Communications Conference (OECC 2023), OECC 2023 ; Conference date: 02-07-2023 Through 06-07-2023",

url = "https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding",

}

de Graaf, J, Konstantinou, D, Rommel, S , Williams, KA , Tafur Monroy, I & Jiao, Y 2023, Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications. in 2023 Opto-Electronics and Communications Conference (OECC)., 10209767, Institute of Electrical and Electronics Engineers, 28th Opto-Electronics and Communications Conference (OECC 2023), Shanghai, China, 2/07/23. https://doi.org/10.1109/OECC56963.2023.10209767

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications. / de Graaf, Jasper; Konstantinou, Dimitrios; Rommel, Simon et al.
2023 Opto-Electronics and Communications Conference (OECC). Institute of Electrical and Electronics Engineers, 2023. 10209767.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Rommel, Simon

AU - Williams, Kevin A.

AU - Tafur Monroy, Idelfonso

AU - Jiao, Yuqing

N1 - Conference code: 28

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AB - This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.

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KW - monolithic integration

KW - V-band

KW - beyond-5G

KW - microwave photonics

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Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

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