Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Uittreksel

We demonstrate an 8-channel tunableWDMtransmitter capable of 320 Gb/s operation. It exhibits high integration density on 36 mm2 chip area and was fabricated in an experimental generic integration platform.

TaalEngels
Titel2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Plaats van productieNew York
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-2
Aantal pagina's2
Volume2017-January
ISBN van elektronische versie978-1-943580-27-9
DOI's
StatusGepubliceerd - 19 mei 2017
Evenement2017 Conference on Lasers and Electro-Optics (CLEO 2017) - San Jose, Verenigde Staten van Amerika
Duur: 14 mei 201719 mei 2017

Congres

Congres2017 Conference on Lasers and Electro-Optics (CLEO 2017)
Verkorte titelCLEO 2017
LandVerenigde Staten van Amerika
StadSan Jose
Periode14/05/1719/05/17

Vingerafdruk

transmitters
Transmitters
platforms
chips

Bibliografische nota

invited presentation

Trefwoorden

    Citeer dit

    Yao, W., Smit, M. K., & Wale, M. J. (2017). Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, blz. 1-2). [paper SM4O.3] New York: Institute of Electrical and Electronics Engineers. DOI: 10.1364/CLEO_SI.2017.SM4O.3
    Yao, W. ; Smit, M. K. ; Wale, M. J./ Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology. 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Vol. 2017-January New York : Institute of Electrical and Electronics Engineers, 2017. blz. 1-2
    @inproceedings{7743415efcc54bcabcf17f204667cebf,
    title = "Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology",
    abstract = "We demonstrate an 8-channel tunableWDMtransmitter capable of 320 Gb/s operation. It exhibits high integration density on 36 mm2 chip area and was fabricated in an experimental generic integration platform.",
    keywords = "Photonic Integrated Circuit, WDM transmitter, optoelectronics",
    author = "W. Yao and Smit, {M. K.} and Wale, {M. J.}",
    note = "invited presentation",
    year = "2017",
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    Yao, W, Smit, MK & Wale, MJ 2017, Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology. in 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. vol. 2017-January, paper SM4O.3, Institute of Electrical and Electronics Engineers, New York, blz. 1-2, San Jose, Verenigde Staten van Amerika, 14/05/17. DOI: 10.1364/CLEO_SI.2017.SM4O.3

    Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology. / Yao, W.; Smit, M. K.; Wale, M. J.

    2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Vol. 2017-January New York : Institute of Electrical and Electronics Engineers, 2017. blz. 1-2 paper SM4O.3.

    Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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    AB - We demonstrate an 8-channel tunableWDMtransmitter capable of 320 Gb/s operation. It exhibits high integration density on 36 mm2 chip area and was fabricated in an experimental generic integration platform.

    KW - Photonic Integrated Circuit

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    Yao W, Smit MK, Wale MJ. Monolithic 8 × 40 Gb/s tunableWDM transmitter based on generic III-V technology. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Vol. 2017-January. New York: Institute of Electrical and Electronics Engineers. 2017. blz. 1-2. paper SM4O.3. Beschikbaar vanaf, DOI: 10.1364/CLEO_SI.2017.SM4O.3