Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

Yi Ming Sheu, Tsung Yi Huang, Yu Ping Hu, Chih Chiang Wang, Sally Liu, Ray Duffy, Anco Heringa, Fred Roozeboom, Nick E.B. Cowern, Peter B. Griffin

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)

Samenvatting

Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

Originele taal-2Engels
Titel2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's75-78
Aantal pagina's4
ISBN van geprinte versie4990276205, 9784990276201
DOI's
StatusGepubliceerd - 1 dec 2005
Extern gepubliceerdJa
Evenement2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duur: 1 sep 20053 sep 2005

Congres

Congres2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Land/RegioJapan
StadTokyo
Periode1/09/053/09/05

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