Samenvatting
Theor. anal. of carrier dynamics in quantum dot lasers is presented, particularly with regard to the effect of carrier relaxation. Two modeling approaches are applied, one is based on std. rate equations and the other on master equations of microstates, to consider random carrier capture. Both models show similar results and can be exploited to describe realistic devices quant. In particular, a reliable estn. of the relaxation time can be obtained from comparison with exptl. results. Finally, the modulation dynamics of real devices is modeled, which shows a suppression of relaxation oscillations on the ground state transition in dependence of the cavity length. [on SciFinder (R)]
| Originele taal-2 | Engels |
|---|---|
| Pagina's (van-tot) | 338-344 |
| Tijdschrift | Physica Status Solidi A : Applied Research |
| Volume | 201 |
| Nummer van het tijdschrift | 2 |
| DOI's | |
| Status | Gepubliceerd - 2004 |
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