Modeling and characterization of InP-based high-speed pin-photodiodes

M. Nikoufard; X.J.M. Leijtens; Y.C. Zhu; J.J.M. Kwaspen; M.K. Smit

Modeling and characterization of InP-based high-speed pin-photodiodes

M. Nikoufard, X.J.M. Leijtens, Y.C. Zhu, J.J.M. Kwaspen, M.K. Smit

Photonic Integration

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.

Originele taal-2	Engels
Titel	proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands
Plaats van productie	Enschede, The Netherlands
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	149-152
Status	Gepubliceerd - 2003
Evenement	8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands - Enschede, Nederland Duur: 20 nov. 2003 → 21 nov. 2003

Congres

Congres	8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands
Land/Regio	Nederland
Stad	Enschede
Periode	20/11/03 → 21/11/03
Ander	Symposium IEEE/LEOS Benelux Chapter, Enschede, Netherlands

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@inproceedings{da107ffdb3334a639a54f486afc8472e,

title = "Modeling and characterization of InP-based high-speed pin-photodiodes",

abstract = "In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.",

author = "M. Nikoufard and X.J.M. Leijtens and Y.C. Zhu and J.J.M. Kwaspen and M.K. Smit",

year = "2003",

language = "English",

pages = "149--152",

booktitle = "proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands ; Conference date: 20-11-2003 Through 21-11-2003",

}

Nikoufard, M, Leijtens, XJM, Zhu, YC, Kwaspen, JJM & Smit, MK 2003, Modeling and characterization of InP-based high-speed pin-photodiodes. in proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands. Institute of Electrical and Electronics Engineers, Enschede, The Netherlands, blz. 149-152, 8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands, Enschede, Nederland, 20/11/03.

Modeling and characterization of InP-based high-speed pin-photodiodes. / Nikoufard, M.; Leijtens, X.J.M.; Zhu, Y.C. et al.
proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands. Enschede, The Netherlands: Institute of Electrical and Electronics Engineers, 2003. blz. 149-152.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Modeling and characterization of InP-based high-speed pin-photodiodes

AU - Nikoufard, M.

AU - Leijtens, X.J.M.

AU - Zhu, Y.C.

AU - Kwaspen, J.J.M.

AU - Smit, M.K.

PY - 2003

Y1 - 2003

N2 - In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.

AB - In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.

M3 - Conference contribution

SP - 149

EP - 152

BT - proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands

PB - Institute of Electrical and Electronics Engineers

CY - Enschede, The Netherlands

T2 - 8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands

Y2 - 20 November 2003 through 21 November 2003

ER -

Modeling and characterization of InP-based high-speed pin-photodiodes

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