MOCVD of zirconium oxide from the zirconium guanidinate complex |ZrCp′{2-(iPrN)2CNMe2}2Cl]

C.S. Blackman, C.J. Carmalt, S.J.A. Moniz, S.E. Potts, H.O. Davies, D.C. Pugh

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

6 Citaten (Scopus)

Samenvatting

Parallel to successful studies into use of [ZrCp'{¿ 2-(iPrN)2CNMe2} 2Cl] as a precursor to the deposition of zirconium carbonitride via CVD the same precursor was utilised for the MOCVD of thin films of ZrO 2 using borosilicate glass substrates. The deposited films were of mixed phase; films deposited at temperatures below 550 °C were predominantly orthorhombic (or tetragonal), whilst films deposited at 600 °C were approximately 1:1 mixtures of monoclinic and orthorhombic (or tetragonal) ZrO2. Additionally the monoclinic phase displayed preferred orientation. Compositional analysis showed that whilst the films had significant amounts of, principally graphitic, carbon contamination, which increased with increasing deposition temperature, chlorine contamination was negligible. © The Electrochemical Society.
Originele taal-2Engels
Titel17th International Chemical Vapor Deposition Symposium (CVD-XVII) as part of the 216th Meeting of the Electrochemical Society 4 -9 October 2009, Vienna
Plaats van productiePennington, NJ
UitgeverijElectrochemical Society, Inc.
Pagina's561-565
ISBN van geprinte versie978-156677741-4
DOI's
StatusGepubliceerd - 2009

Publicatie series

NaamECS Transactions
Volume25
ISSN van geprinte versie1938-6737

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