Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors

S. Assali (Corresponding author), A. Dijkstra, A. Attiaoui, É. Bouthillier, J.E.M. Haverkort, O. Moutanabbir

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14 Citaten (Scopus)
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Samenvatting

By independently engineering strain and composition, this work demonstrates and investigates direct-band-gap emission in the midinfrared range from Ge1-xSnx layers grown on silicon. We extend the room-temperature emission wavelength above approximately 4.0 μm upon postgrowth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always observed in the probed temperature range of 4-300 K, ruling out defect- and impurity-related emission. Moreover, carrier losses into thermally activated nonradiative recombination channels are found to be greatly minimized as a result of strain relaxation. Absorption measurements validate the direct band-gap in strained and relaxed samples at energies closely matching photoluminescence data. These results highlight the strong potential of Ge1-xSnx semiconductors as versatile building blocks for scalable, compact, and silicon-compatible midinfrared photonics and quantum optoelectronics.

Originele taal-2Engels
Artikelnummer024031
Aantal pagina's13
TijdschriftPhysical Review Applied
Volume15
Nummer van het tijdschrift2
DOI's
StatusGepubliceerd - feb. 2021

Bibliografische nota

Funding Information:
The authors thank J. Bouchard for the technical support with the CVD system. O.M. acknowledges support from NSERC Canada (Discovery, SPG, and CRD Grants), Canada Research Chairs, Canada Foundation for Innovation, Mitacs, PRIMA Québec, and Defence Canada (Innovation for Defence Excellence and Security, IDEaS). S.A. acknowledges support from Fonds de recherche du Québec-Nature et technologies (FRQNT, PBEEE scholarship). A.D. acknowledges support from the NWO gravity program.

Publisher Copyright:
© 2021 American Physical Society.

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