Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

E. Selcuk; G.J. Hamhuis; R. Nötzel

doi:10.1063/1.3295544

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

E. Selcuk, G.J. Hamhuis, R. Nötzel

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.

Originele taal-2	Engels
Pagina's (van-tot)	535-536
Aantal pagina's	2
Tijdschrift	AIP Conference Proceedings
Volume	1199
DOI's	https://doi.org/10.1063/1.3295544
Status	Gepubliceerd - 2010

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10.1063/1.3295544

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@article{e3e7e23edf044de89500f94c9e380fc7,

title = "Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B",

abstract = "Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.",

author = "E. Selcuk and G.J. Hamhuis and R. N{\"o}tzel",

year = "2010",

doi = "10.1063/1.3295544",

language = "English",

volume = "1199",

pages = "535--536",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

AU - Selcuk, E.

AU - Hamhuis, G.J.

AU - Nötzel, R.

PY - 2010

Y1 - 2010

N2 - Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.

AB - Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.

U2 - 10.1063/1.3295544

DO - 10.1063/1.3295544

M3 - Article

SN - 0094-243X

VL - 1199

SP - 535

EP - 536

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

ER -

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

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