Samenvatting
A method for plasma deposition of materials onto a two-dimensional (2D) layer 405 of a first substrate 401, the method comprising: depositing a protective layer 406 directly onto the 2D layer 405 in a pulsed plasma deposition process; and depositing a second layer 407 onto the protective layer 406 in a second plasma deposition process. The 2D layer 405 may comprise graphene. The protective layer 406 may be a dielectric, preferably a metal or semiconductor nitride, carbide or carbonitride. The pulsed plasma deposition process may be a plasma enhanced atomic layer deposition (PEALD) process, a pulsed plasma enhanced chemical vapour deposition (PPECVD) process or a radical enhanced atomic layer deposition (REALD) process, such as hot wire assisted atomic layer deposition.
| Originele taal-2 | Engels |
|---|---|
| Octrooinummer | GB2613821 |
| IPC | H01L 21/ 02 A I |
| Prioriteitsdatum | 15/12/21 |
| Status | Gepubliceerd - 21 jun 2023 |
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