Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich; K. Hušeková; Z. Oszi; J.C. Hooker; M. Fanciulli; C. Wiemer; A. Dimoulas; G. Vellianitis; F. Roozeboom

doi:10.1002/andp.200310038

Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich
, K. Hušeková
, Z. Oszi
, J.C. Hooker
, M. Fanciulli
, C. Wiemer
, A. Dimoulas
, G. Vellianitis
, F. Roozeboom

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

6 Citaten (Scopus)

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We have prepared RuO₂ and SrRuO₃ thin films for application as gate electrodes in CMOS technology. RuO₂ and SrRuO₃ films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO₂ films decompose in reducing atmosphere. Extracted work function values for RuO₂ electrode are around 5.1 eV, confirming that RuO₂ is a suitable candidate for pMOS gate electrode application.

Originele taal-2	Engels
Pagina's (van-tot)	31-34
Aantal pagina's	4
Tijdschrift	Annalen der Physik
Volume	13
Nummer van het tijdschrift	1-2
DOI's	https://doi.org/10.1002/andp.200310038
Status	Gepubliceerd - 1 jan. 2004
Extern gepubliceerd	Ja

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title = "Metal oxide gate electrodes for advanced CMOS technology",

abstract = "We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.",

keywords = "CMOS, Conducting oxides, MOCVD",

author = "K. Fr{\"o}hlich and K. Hu{\v s}ekov{\'a} and Z. Oszi and J.C. Hooker and M. Fanciulli and C. Wiemer and A. Dimoulas and G. Vellianitis and F. Roozeboom",

year = "2004",

month = jan,

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doi = "10.1002/andp.200310038",

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TY - JOUR

T1 - Metal oxide gate electrodes for advanced CMOS technology

AU - Fröhlich, K.

AU - Hušeková, K.

AU - Oszi, Z.

AU - Hooker, J.C.

AU - Fanciulli, M.

AU - Wiemer, C.

AU - Dimoulas, A.

AU - Vellianitis, G.

AU - Roozeboom, F.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.

AB - We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.

KW - CMOS

KW - Conducting oxides

KW - MOCVD

UR - https://www.scopus.com/pages/publications/1242329382

U2 - 10.1002/andp.200310038

DO - 10.1002/andp.200310038

M3 - Article

AN - SCOPUS:1242329382

SN - 0003-3804

VL - 13

SP - 31

EP - 34

JO - Annalen der Physik

JF - Annalen der Physik

IS - 1-2

ER -

Metal oxide gate electrodes for advanced CMOS technology

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