Metal free graphene synthesis on insulating or semiconducting substrates

Z. Tomovic; Nils-Eike Weber; Axel Binder; Norbert Wagner

Metal free graphene synthesis on insulating or semiconducting substrates

Z. Tomovic (Uitvinder), Nils-Eike Weber (Uitvinder), Axel Binder (Uitvinder), Norbert Wagner (Uitvinder)

Onderzoeksoutput: Octrooi › Octrooi-publicatie

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Samenvatting

The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

Originele taal-2	Engels
Octrooinummer	WO2017/064113Al
Prioriteitsdatum	15/10/15
Indieningsdatum	12/10/16
Status	Gepubliceerd - 20 apr 2017
Extern gepubliceerd	Ja

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16. WO2017064113-PAMPH-20170420-5524

https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2017064113

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title = "Metal free graphene synthesis on insulating or semiconducting substrates",

abstract = "The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.",

author = "Z. Tomovic and Nils-Eike Weber and Axel Binder and Norbert Wagner",

year = "2017",

month = apr,

day = "20",

language = "English",

type = "Patent",

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T1 - Metal free graphene synthesis on insulating or semiconducting substrates

AU - Tomovic, Z.

AU - Weber, Nils-Eike

AU - Binder, Axel

AU - Wagner, Norbert

PY - 2017/4/20

Y1 - 2017/4/20

N2 - The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

AB - The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

UR - https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2017064113

M3 - Patent publication

M1 - WO2017/064113Al

Y2 - 2016/10/12

ER -