Merging Nanowires and Formation Dynamics of Bottom-Up Grown InSb Nanoflakes

Marco Rossi, Ghada Badawy, Zhi Yuan Zhang, Guang Yang, Guo An Li, Jia Yu Shi, Roy L.M. Op het Veld, Sasa Gazibegovic, Lu Li, Jie Shen (Corresponding author), Marcel A. Verheijen, Erik P.A.M. Bakkers (Corresponding author)

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Samenvatting

Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for studying new quantum phenomena in hybrid semiconductor-superconductor devices. The realization of such devices with defect-free InSb thin films is challenging, since InSb has a large lattice mismatch with most common insulating substrates. Here, the controlled synthesis of free-standing 2D InSb nanostructures, termed as “nanoflakes”, on a highly mismatched substrate is presented. The nanoflakes originate from the merging of pairs of InSb nanowires grown in V-groove incisions, each from a slanted and opposing {111}B facet. The relative orientation of the two nanowires within a pair, governs the nanoflake morphologies, exhibiting three distinct ones related to different grain boundary arrangements: no boundary (type-I), Σ3- (type-II), and Σ9-boundary (type-III). Low-temperature transport measurements indicate that type-III nanoflakes are of a relatively lower quality compared to type-I and type-II, based on field-effect mobility. Moreover, type-III nanoflakes exhibit a conductance dip attributed to an energy barrier pertaining to the Σ9-boundary. Type-I and type-II nanoflakes exhibit promising transport properties, suitable for quantum devices. This platform hosting nanoflakes next to nanowires and nanowire networks can be used to selectively deposit the superconductor by inter-shadowing, yielding InSb-superconductor hybrid devices with minimal post-fabrication steps.

Originele taal-2Engels
Artikelnummer2212029
Aantal pagina's9
TijdschriftAdvanced Functional Materials
Volume33
Nummer van het tijdschrift17
DOI's
StatusGepubliceerd - 25 apr. 2023

Bibliografische nota

Funding Information:
The authors thank Peterus Johannes van Veldhoven for the support with the MOVPE reactor at the Eindhoven University of Technology and Yigitcan Uzun for insightful discussions. The authors thank NanoLab@TU/e for their help and support. Solliance and the Dutch province of Noord‐Brabant are acknowledged for funding the TEM facility. This work was supported by the Dutch Research Council (NWO), grant codes TOP.016.001 and TKI1812P04. The work of Z.Y.Z., G. Y., G.L., J.Y.S., L.L., and J.S. were supported by the National Natural Science Foundation of China (Grant Nos. 92065203 and 12174430), the Strategic Priority Research Program B of Chinese Academy of Sciences (Grant No. XDB33000000), the Beijing Nova Program (Grant No. Z211100002121144), and the Synergetic Extreme Condition User Facility (SECUF).

Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.

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