MEMS tunable capacitors and switches for RF applications

Th G.S.M. Rijks; J.T.M. van Beek; P. G. Steeneken; M. J.E. Ulenaers; P. van Eerd; J.M.J. den Toonder; A R. van Dijken; J. de Coster; R. Puers; J. W. Weekamp; J. M. Scheer; A. Jourdain; H. A.C. Tilmans

doi:10.1109/ICMEL.2004.1314557

MEMS tunable capacitors and switches for RF applications

Th G.S.M. Rijks
, J.T.M. van Beek
, P. G. Steeneken
, M. J.E. Ulenaers
, P. van Eerd
, J.M.J. den Toonder
, A R. van Dijken
, J. de Coster
, R. Puers
, J. W. Weekamp
, J. M. Scheer
, A. Jourdain
, H. A.C. Tilmans

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

10 Citaten (Scopus)

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RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.

Originele taal-2	Engels
Titel	24th International Conference on Microelectronics
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	49-56
Aantal pagina's	8
ISBN van geprinte versie	0-7803-8166-1
DOI's	https://doi.org/10.1109/ICMEL.2004.1314557
Status	Gepubliceerd - 28 jul. 2004
Evenement	2004 24th International Conference on Microelectronics, MIEL 2004 - Nis Duur: 16 mei 2004 → 19 mei 2004

Congres

Congres	2004 24th International Conference on Microelectronics, MIEL 2004
Stad	Nis
Periode	16/05/04 → 19/05/04

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10.1109/ICMEL.2004.1314557

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Rijks, T. G. S. M., van Beek, J. T. M., Steeneken, P. G., Ulenaers, M. J. E., van Eerd, P., den Toonder, J. M. J., van Dijken, A. R., de Coster, J., Puers, R., Weekamp, J. W., Scheer, J. M., Jourdain, A., & Tilmans, H. A. C. (2004). MEMS tunable capacitors and switches for RF applications. In 24th International Conference on Microelectronics (blz. 49-56). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICMEL.2004.1314557

@inproceedings{8e930c08b9ef49a7b04f0048c4cf5292,

title = "MEMS tunable capacitors and switches for RF applications",

abstract = "RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.",

author = "Rijks, \{Th G.S.M.\} and \{van Beek\}, J.T.M. and Steeneken, \{P. G.\} and Ulenaers, \{M. J.E.\} and \{van Eerd\}, P. and \{den Toonder\}, J.M.J. and \{van Dijken\}, \{A R.\} and \{de Coster\}, J. and R. Puers and Weekamp, \{J. W.\} and Scheer, \{J. M.\} and A. Jourdain and Tilmans, \{H. A.C.\}",

year = "2004",

month = jul,

day = "28",

doi = "10.1109/ICMEL.2004.1314557",

language = "English",

isbn = "0-7803-8166-1",

pages = "49--56",

booktitle = "24th International Conference on Microelectronics",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2004 24th International Conference on Microelectronics, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

}

Rijks, TGSM, van Beek, JTM, Steeneken, PG, Ulenaers, MJE, van Eerd, P, den Toonder, JMJ, van Dijken, AR, de Coster, J, Puers, R, Weekamp, JW, Scheer, JM, Jourdain, A & Tilmans, HAC 2004, MEMS tunable capacitors and switches for RF applications. in 24th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers, Piscataway, blz. 49-56, 2004 24th International Conference on Microelectronics, MIEL 2004, Nis, 16/05/04. https://doi.org/10.1109/ICMEL.2004.1314557

TY - GEN

T1 - MEMS tunable capacitors and switches for RF applications

AU - Rijks, Th G.S.M.

AU - van Beek, J.T.M.

AU - Steeneken, P. G.

AU - Ulenaers, M. J.E.

AU - van Eerd, P.

AU - den Toonder, J.M.J.

AU - van Dijken, A R.

AU - de Coster, J.

AU - Puers, R.

AU - Weekamp, J. W.

AU - Scheer, J. M.

AU - Jourdain, A.

AU - Tilmans, H. A.C.

PY - 2004/7/28

Y1 - 2004/7/28

N2 - RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.

AB - RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.

UR - https://www.scopus.com/pages/publications/3142782071

U2 - 10.1109/ICMEL.2004.1314557

DO - 10.1109/ICMEL.2004.1314557

M3 - Conference contribution

AN - SCOPUS:3142782071

SN - 0-7803-8166-1

SP - 49

EP - 56

BT - 24th International Conference on Microelectronics

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2004 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

MEMS tunable capacitors and switches for RF applications

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