Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications

P. Heremans, A.K. Tripathi, A. de Jamblinne de Meux, E.C.P. Smits, B. Hou, G. Pourtois, G.H. Gelinck

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

93 Citaties (Scopus)

Uittreksel

The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.

TaalEngels
Pagina's4266-4282
TijdschriftAdvanced Materials
Volume28
Nummer van het tijdschrift22
DOI's
StatusGepubliceerd - 8 jun 2016

Vingerafdruk

Flexible electronics
Thin film transistors
Electronic properties
Transistors
Plastics
Amorphous semiconductors
Mechanical properties
Semiconductor materials
Band structure
Flexible displays
Semiconducting organic compounds
Gate dielectrics
Amorphous silicon
Polysilicon
Display devices
Thin films
Oxide semiconductors

Citeer dit

Heremans, P., Tripathi, A. K., de Jamblinne de Meux, A., Smits, E. C. P., Hou, B., Pourtois, G., & Gelinck, G. H. (2016). Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications. Advanced Materials, 28(22), 4266-4282. DOI: 10.1002/adma.201504360
Heremans, P. ; Tripathi, A.K. ; de Jamblinne de Meux, A. ; Smits, E.C.P. ; Hou, B. ; Pourtois, G. ; Gelinck, G.H./ Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications. In: Advanced Materials. 2016 ; Vol. 28, Nr. 22. blz. 4266-4282
@article{1d69a2f27de04bbc833aa3398691c472,
title = "Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications",
abstract = "The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.",
author = "P. Heremans and A.K. Tripathi and {de Jamblinne de Meux}, A. and E.C.P. Smits and B. Hou and G. Pourtois and G.H. Gelinck",
year = "2016",
month = "6",
day = "8",
doi = "10.1002/adma.201504360",
language = "English",
volume = "28",
pages = "4266--4282",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "22",

}

Heremans, P, Tripathi, AK, de Jamblinne de Meux, A, Smits, ECP, Hou, B, Pourtois, G & Gelinck, GH 2016, 'Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications' Advanced Materials, vol. 28, nr. 22, blz. 4266-4282. DOI: 10.1002/adma.201504360

Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications. / Heremans, P.; Tripathi, A.K.; de Jamblinne de Meux, A.; Smits, E.C.P.; Hou, B.; Pourtois, G.; Gelinck, G.H.

In: Advanced Materials, Vol. 28, Nr. 22, 08.06.2016, blz. 4266-4282.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications

AU - Heremans,P.

AU - Tripathi,A.K.

AU - de Jamblinne de Meux,A.

AU - Smits,E.C.P.

AU - Hou,B.

AU - Pourtois,G.

AU - Gelinck,G.H.

PY - 2016/6/8

Y1 - 2016/6/8

N2 - The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.

AB - The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.

UR - http://www.scopus.com/inward/record.url?scp=84953281071&partnerID=8YFLogxK

U2 - 10.1002/adma.201504360

DO - 10.1002/adma.201504360

M3 - Article

VL - 28

SP - 4266

EP - 4282

JO - Advanced Materials

T2 - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 22

ER -

Heremans P, Tripathi AK, de Jamblinne de Meux A, Smits ECP, Hou B, Pourtois G et al. Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications. Advanced Materials. 2016 jun 8;28(22):4266-4282. Beschikbaar vanaf, DOI: 10.1002/adma.201504360