Samenvatting
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.
| Originele taal-2 | Engels |
|---|---|
| Artikelnummer | 162102 |
| Aantal pagina's | 3 |
| Tijdschrift | Applied Physics Letters |
| Volume | 98 |
| Nummer van het tijdschrift | 16 |
| DOI's | |
| Status | Gepubliceerd - 18 apr. 2011 |
| Extern gepubliceerd | Ja |