Low resistivity HfN: X grown by plasma-assisted ALD with external rf substrate biasing

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6 Citaties (Scopus)

Uittreksel

Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris(dimethylamino)cyclopentadienylhafnium [CpHf(NMe2)3] as the Hf precursor and H2 plasma as the reducing co-reactant is reported. We previously concluded that the HfNx films prepared for a grounded substrate (0 V substrate potential) exhibited a rather high electrical resistivity of 9.0 × 10-1 Ω cm. In the present work, we show a steady decrease in the electrical resistivity by two orders of magnitude to 3.3 × 10-3 Ω cm upon increasing the time-averaged substrate potential up to -130 V by externally biasing the substrate. A further increase in potential up to -187 V led to an increase in electrical resistivity to 1.0 × 10-2 Ω cm. The variations in electrical resistivity with the potential were found to correlate with the extent of grain boundary scattering in the films, which significantly decreased upon increasing the potential up to -130 V, primarily due to major changes in the film chemical composition. The latter consisted in a decrease in O content from 20.1 at% under no bias to ≤ 2 at% for a potential of -130 V and an associated increase in the Hf3+ fraction from 0.65 to 0.82. The latter is key to the development of low resistivity δ-HfN. A further increase in potential to -187 V led to an increase in grain boundary scattering as a consequence of a major decrease in grain size as well as in-grain crystallinity. In view of advanced nanoelectronic devices, the HfNx layers were also deposited on 3D trench nanostructures at a potential of -130 V. A low oxygen content in the HfNx film was measured on both the planar and vertical topographies of the trenches. Overall, the time-averaged substrate potential has been shown to highly affect the chemical composition, microstructure and the associated electrical properties of the HfNx layers and can be used to tailor the HfNx film properties.

TaalEngels
Pagina's3917-3926
Aantal pagina's10
TijdschriftJournal of Materials Chemistry C
Volume6
Nummer van het tijdschrift15
Vroegere onlinedatum12 mrt 2018
DOI's
StatusGepubliceerd - 12 mrt 2018

Vingerafdruk

Atomic layer deposition
Plasmas
Substrates
Grain boundaries
Scattering
Nanoelectronics
Chemical analysis
Topography
Nanostructures
Electric properties
Oxygen
Thin films
Microstructure

Citeer dit

@article{7222daa1551e4d91b683eabada3453c3,
title = "Low resistivity HfN: X grown by plasma-assisted ALD with external rf substrate biasing",
abstract = "Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris(dimethylamino)cyclopentadienylhafnium [CpHf(NMe2)3] as the Hf precursor and H2 plasma as the reducing co-reactant is reported. We previously concluded that the HfNx films prepared for a grounded substrate (0 V substrate potential) exhibited a rather high electrical resistivity of 9.0 × 10-1 Ω cm. In the present work, we show a steady decrease in the electrical resistivity by two orders of magnitude to 3.3 × 10-3 Ω cm upon increasing the time-averaged substrate potential up to -130 V by externally biasing the substrate. A further increase in potential up to -187 V led to an increase in electrical resistivity to 1.0 × 10-2 Ω cm. The variations in electrical resistivity with the potential were found to correlate with the extent of grain boundary scattering in the films, which significantly decreased upon increasing the potential up to -130 V, primarily due to major changes in the film chemical composition. The latter consisted in a decrease in O content from 20.1 at{\%} under no bias to ≤ 2 at{\%} for a potential of -130 V and an associated increase in the Hf3+ fraction from 0.65 to 0.82. The latter is key to the development of low resistivity δ-HfN. A further increase in potential to -187 V led to an increase in grain boundary scattering as a consequence of a major decrease in grain size as well as in-grain crystallinity. In view of advanced nanoelectronic devices, the HfNx layers were also deposited on 3D trench nanostructures at a potential of -130 V. A low oxygen content in the HfNx film was measured on both the planar and vertical topographies of the trenches. Overall, the time-averaged substrate potential has been shown to highly affect the chemical composition, microstructure and the associated electrical properties of the HfNx layers and can be used to tailor the HfNx film properties.",
author = "S. Karwal and Verheijen, {M. A.} and Williams, {B. L.} and T. Faraz and Kessels, {W. M.M.} and M. Creatore",
year = "2018",
month = "3",
day = "12",
doi = "10.1039/C7TC05961B",
language = "English",
volume = "6",
pages = "3917--3926",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "15",

}

Low resistivity HfN: X grown by plasma-assisted ALD with external rf substrate biasing. / Karwal, S.; Verheijen, M. A.; Williams, B. L.; Faraz, T.; Kessels, W. M.M.; Creatore, M.

In: Journal of Materials Chemistry C, Vol. 6, Nr. 15, 12.03.2018, blz. 3917-3926.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Low resistivity HfN: X grown by plasma-assisted ALD with external rf substrate biasing

AU - Karwal,S.

AU - Verheijen,M. A.

AU - Williams,B. L.

AU - Faraz,T.

AU - Kessels,W. M.M.

AU - Creatore,M.

PY - 2018/3/12

Y1 - 2018/3/12

N2 - Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris(dimethylamino)cyclopentadienylhafnium [CpHf(NMe2)3] as the Hf precursor and H2 plasma as the reducing co-reactant is reported. We previously concluded that the HfNx films prepared for a grounded substrate (0 V substrate potential) exhibited a rather high electrical resistivity of 9.0 × 10-1 Ω cm. In the present work, we show a steady decrease in the electrical resistivity by two orders of magnitude to 3.3 × 10-3 Ω cm upon increasing the time-averaged substrate potential up to -130 V by externally biasing the substrate. A further increase in potential up to -187 V led to an increase in electrical resistivity to 1.0 × 10-2 Ω cm. The variations in electrical resistivity with the potential were found to correlate with the extent of grain boundary scattering in the films, which significantly decreased upon increasing the potential up to -130 V, primarily due to major changes in the film chemical composition. The latter consisted in a decrease in O content from 20.1 at% under no bias to ≤ 2 at% for a potential of -130 V and an associated increase in the Hf3+ fraction from 0.65 to 0.82. The latter is key to the development of low resistivity δ-HfN. A further increase in potential to -187 V led to an increase in grain boundary scattering as a consequence of a major decrease in grain size as well as in-grain crystallinity. In view of advanced nanoelectronic devices, the HfNx layers were also deposited on 3D trench nanostructures at a potential of -130 V. A low oxygen content in the HfNx film was measured on both the planar and vertical topographies of the trenches. Overall, the time-averaged substrate potential has been shown to highly affect the chemical composition, microstructure and the associated electrical properties of the HfNx layers and can be used to tailor the HfNx film properties.

AB - Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris(dimethylamino)cyclopentadienylhafnium [CpHf(NMe2)3] as the Hf precursor and H2 plasma as the reducing co-reactant is reported. We previously concluded that the HfNx films prepared for a grounded substrate (0 V substrate potential) exhibited a rather high electrical resistivity of 9.0 × 10-1 Ω cm. In the present work, we show a steady decrease in the electrical resistivity by two orders of magnitude to 3.3 × 10-3 Ω cm upon increasing the time-averaged substrate potential up to -130 V by externally biasing the substrate. A further increase in potential up to -187 V led to an increase in electrical resistivity to 1.0 × 10-2 Ω cm. The variations in electrical resistivity with the potential were found to correlate with the extent of grain boundary scattering in the films, which significantly decreased upon increasing the potential up to -130 V, primarily due to major changes in the film chemical composition. The latter consisted in a decrease in O content from 20.1 at% under no bias to ≤ 2 at% for a potential of -130 V and an associated increase in the Hf3+ fraction from 0.65 to 0.82. The latter is key to the development of low resistivity δ-HfN. A further increase in potential to -187 V led to an increase in grain boundary scattering as a consequence of a major decrease in grain size as well as in-grain crystallinity. In view of advanced nanoelectronic devices, the HfNx layers were also deposited on 3D trench nanostructures at a potential of -130 V. A low oxygen content in the HfNx film was measured on both the planar and vertical topographies of the trenches. Overall, the time-averaged substrate potential has been shown to highly affect the chemical composition, microstructure and the associated electrical properties of the HfNx layers and can be used to tailor the HfNx film properties.

UR - http://www.scopus.com/inward/record.url?scp=85045837695&partnerID=8YFLogxK

U2 - 10.1039/C7TC05961B

DO - 10.1039/C7TC05961B

M3 - Article

VL - 6

SP - 3917

EP - 3926

JO - Journal of Materials Chemistry C

T2 - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 15

ER -